4.3  H - Bridge & Voltage Multiplier at High Voltage

The measurement results at 60V show that the circuit can not be tested at the designated dc-voltage level of 650V. Figure 4.21 shows the simulated gate signal (R1 = 4,9kW, V_power_1 = 650V). The voltage level of the noise spike is 5.34V. In the simulation, this spike does not cause a fault turn-on of the IGBT. But at the real signal, induced oscillations (compare Figure 4.19 and Figure 4.20 turn the IGBT on and cause a fatal short circuit.

 

Figure 4.21: Simulation data: gate signal at IGBT2, V_power_1 = 650V

 

This page is part of a Frameset: Electrodynamic Sculpture: A Thesis by Rafael Bräg.